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Издательство "Новые технологии"
Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт радиотехники, электроники и автоматики (технический университет)"
Институт сверхвысокочастотной полупроводниковой электроники РАН
Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В.И. Ульянова (Ленина) СПбГЭТУ «ЛЭТИ»
Южный федеральный университет
Федеральное государственное автономное образовательное учреждение высшего образования «Национальный исследовательский университет «Московский институт электронной техники».
НПК «Технологический центр»
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Archives of conferences

NATO
Advanced Research Workshop

Science and Technology of
Semiconductor-On-Insulator structures and
devices operating in a harsh environment

25-29 April 2004, Kyiv, Ukraine

Workshop Chairmen:

Denis Flandre
Catholic University of Louvain,
DICE, Place du Levant, 3,
1348 Louvain-la-Neuve,
BELGIUM
Phone: 32.10.478135
Fax: 32.10.472598
E-mail: flandre@dice.ucl.ac.be
Alexei N. Nazarov
Inst. of Semiconductor Physics,
NAS of Ukraine
Prospekt Nauki 45,
03028 Kyiv-28
UKRAINE
Phone: 380(44) 2657022
FAX: 380(44) 2656177
E-mail: nazarov@lab15.kiev.ua
If you are planning to attend the workshop, please contact with organizers at your earliest convenience.
  • Characterization of SOI materials and devices at extreme conditions
  • SOI sensors
  • Technology and economics

List of Keynote Speakers (with paper title):

Prof. F. Balestra (IMEP-ENSERG, Grenoble, France)
Reliability and electrical fluctuations in advanced SOI CMOS devices.

Dr. H. MORICEAU (LETI, Grenoble, France)
Advanced Smart-cut applications

Prof. S.Cristolovianu (ENSERG, Grenoble, France).
Electrical characterization of SOI structures and devices

Prof. D.Flandre (UCL, Louvain-la-Neuve, Belgium)
Recent fully-depleted SOI MOSFET advances

Prof. V.Bayot (UCL, Louvain-la-Neuve, Belgium)
Low-temperature SOI nanoelectronics

Dr. Dr. Valentin Nakov (IMMS, Germany)
Silicon-on-insulator circuits for application in a harsh environment

Dr. Dr. David Flores ( CNM, Spain)
High-voltage SOI transistors

Prof. S.Hall (University of Liverpool, UK)
SiGeOI devices and circuits

Dr. C.Johnston (HITEN, UK)
Development of high-temperature electronics in EC

Prof. F.Gamiz (Granada University, Spain)
Monte Carlo simulation of SOI devices

Prof. J.P.Colinge (UC Davis, USA)
Use SOI pi-MOSFETs for operation in hard conditions

Prof. C.Colinge (California State University, Sacramento, USA)
Achievements of low-temperature wafer bonding technology

Prof. W.Skorupa (Rossendorf Research Sentre, Dresden, Germany)
SiC-on-SOI by energy beam transient processing

Prof. J.Olsson (Uppsala University, Sweden)
High-voltage SOI devices for automotive application

Dr. Y.Ishikawa (Japan Fine Ceramics Center, Japan)
Achievements of SiGe-on-insulator technology

Prof. V.N.Mordkovich (Institute of Microelectronics Technology, Moscow, Russia)
Microelectronics SOI elements operating at harsh conditions

Dr. V.Popov (Institute of Semiconductor Physics, RAS, Novosibirsk, Russia)
SOI nanotransistors and their properties

Prof. V.N.Murashov (MISA, Moscow, Russia)
Functional-integrated electronics on SOI

Prof. V.P.Bondarenko (BSUIR, Minsk, Belorus)
Porous silicon based SOI: history and prospects

Prof. V.S.Lysenko (ISP, Kyiv, Ukraine)
Electron processes in SOI interfaces at cryogenic temperature

Prof. V.G.Litovchenko (ISP, Kyiv, Ukraine)
Simulation of SOI and SiC layer structures formation, using interstitials defects flow.

Workshop key dates

Deadline for Abstracts - 15 January 2004
Notification to Authors - 1 February 2004
Issue Preliminary Programme - 1 February 2004
Deadline hotel reservations - 15 March 2004
Arrival and welcome party - 25 April 2004

Call for Papers

We encourage the submission of papers related to the topics of the Workshop. The proceedings of the Workshop will be published by Kluwer Academic Publishers in the book “Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment”. Only high-quality papers, containing new and valuable results, will be accepted for publication after a refereeing process. The typing instructions for the proceedings will be sent together with the scientific programme of the workshop.

Abstracts:

Deadline: 15 January 2004 The abstract must be clearly typewritten or laser-printed on white paper (size A4) with 2cm margins on the top, bottom, right sides and 3 cm margin on left side. The abstract should be headed by the title (bold), author(s) and affiliation. Please, identify the contact (presenting) author with tel/fax number and e-mail address. Comprehensive instruction for abstract preparation see on the last page of this announcement.
The abstract should be submitted electronically to the following address: houk@lab15.kiev.ua

GENERAL INFORMATION:

Historic Kyiv
Kyiv is the capital of the Ukraine with a population of about three million. It is located about 400 km north of the Black Sea and lies on both East and West banks of the River Dnipro which flows into the Black Sea. The Ukraine is a founding member of the United Nations. The country declared its independence in 1991.
The city's history can be traces back to the fifth century but its rich heritage principally dates from the eleventh century after the arrival of Christianity and construction of cathedrals and monasteries. Much rebuilding has taken place and today one can visit St Sophia's Cathedral (since 1990 a UNESCO World Heritage site), The Golden Gate (memorable from Mussorgsky's "Pictures of an Exhibition"), St Cyrils Church (twelfth century frescos), Kyiv-Pechersk Lavra (complex of buildings including The Gate Church of the Trinity and caves) and more recent buildings including St Volodymir's Cathedral (nineteenth century), St Andrew's Church (eighteenth century, Baroque) and The Mariinski Palace, built during the eighteenth century. The city has many other historic churches, museums, an opera house and the newly restores National Philharmonic concert hall.
It is difficult to describe Kyiv in words. If you visit it, you will see for yourself how beautiful and exciting it is. We are convinced that it will not disappoint you, and you will be going back home full of new and unforgettable impressions.
Venue
The Workshop venue is a sanatorium, which is located in picturesque woodlands about 20 km of Kyiv city centre. The lecture theatre, meeting rooms, restaurant and “en-suite” accommodation plus a bar/coffee shop are all located in adjacent buildings within the
complex. A large lake, which is used for outdoor swimming during the summer, is located within the grounds. Alongside the accommodation building is a resurfaced tennis court which will be available for use by Workshop attendees. The address of the venue is: Sanatorium "Puscha Ozerna", Urban Settlement Puscha Voditsa, 14th line, Kyiv-75, Ukraine.

During the period of the Workshop attendees will have access to e-mail, fax and telephone services which will be installed in the Workshop secretariat in the sanatorium. Word processing (PC) and photocopying facilities will be available, also.

Workshop Office

Prior and during the Workshop all communication should be directed to:

Yuri Houk
Inst. of Semiconductor Physics, NAS of Ukraine
Prospect Nauki 45,
03028 Kyiv-28
Ukraine
Phone: 380 44 265 7022
Fax: 380 44 265 6177
E-mail: houk@lab15.kiev.ua

Transportation

Kyiv, the capital of Ukraine, is easily accessible by air and train. There are direct flights from European capitals.
The travel time by road from Borispol airport to Kyiv is about forty minutes (motorway) and, also, about forty minutes from Kyiv city centre to the sanatorium, depending upon traffic density.

Currency

The currency unit in the Ukraine is the Hryvnia (Hr). The approximate exchange rates are (November 2004): 1$ (US) = 5.45 Hr; 1€ = 6.30 Hr. Numerous currency exchanges are available in Kyiv. Credit cards are not used extensively, however the larger hotels and stores will accept them where Mastercard and Visa seems to be the preferred card.
Essentially, there is no limit to the amount of foreign currency and travellers cheques that can be taken into the Ukraine but it is important to make a declaration at the point of entry into the country (appropriate documents are available within the Airport terminal).

Visa

Attendees from NATO and Western European countries and Japan will require entry visa. Upon request from attendees, the Workshop organizers will provide "official" letters of invitation which should be presented to the appropriate Ukrainian Embassy together with a completed visa application from.

Social events

Sunday, April 25
Welcome reception will be held in the late afternoon in connection with registration at the restaurant of Sanatorium "Puscha-Ozerna".
Tuesday, April 27
Poster buffet with beer
Wednesday, April 28
A guided tour to Kyiv-Pechersk Lavra - the ensemble of buildings with a Near and Far caves. It was created throughout nine centuries and includes architectural monuments from the 11th to the 19th centuries. Now it is not only museum, but also a monastery.

REGISTRATION

Registration fee
The full registration fee (€80) for participants includes participation in the scientific sessions, program booklet, abstract book, coffee breaks, social events like, e.g. excursion, conference banquet, etc.
Registration fee should be paid in cash (Euro) in day of registration at the Registration desk.
Accommodation
As a service for the participants, the Local Committee will pre-book accommodation in Sanatorium "Puscha Ozerna" for the period of April 25 to April 29, 2000 (5 nights). The rate for lodging in a single room and full board is about €40 per day; the rate for lodging in a double room and full board is about €35 per person and day.
In order to fulfill your requirements, you are advised to contact with Organizers at your earliest convenience.

Workshop timetable

  AM 1230-1400 PM 1830 - 2000
Sunday 25th Apr. Registration L Registration
Welcome reception
D
Monday 26th Apr. Opening Technology and Economics SOI Material Technologies U SOI Material Technologies I
Tuesday 27th Apr. Reliability and operation of SOI devices in harsh enviroment N Operation of SOI devices in harsh enviroment Poster Session N
Wednesday 28th Apr. Characterization and Simulation of SOI devices operating in harsh enviroment C Cultural visits N
Thursday 29th Apr. Physics of New SOI devices and ICs H Round Table Discussion End of meeting E
Friday 30th Apr. Attendees Depart     R

Preparation of Abstract

A.B. Author and *С.D. Coauthor
Institute of Semiconductor Physics of Ukraine
*Catholic University of Louvain, DICE, Belgium

This set of instructions is given in the style and format to be used by authors in preparing “camera-ready” abstracts. Please follow the instructions listed below. Abstract must be prepared in English.

Total length of Abstract
The total length of the abstract, including all text, graphs, tables, charts, drawing and pictures, is two pages.

Printout
The most suitable printer is laser/jet. The printout submitted should be an original; a photocopy is not acceptable. Please make use of good quality plain white A4 paper size.

Size
The abstract must be typed within the frame shown (16 x 25 cm2); the frame must not appear on the summary. Margins on the top, bottom, left and right are thus 2cm, 2cm, 3cm and 2cm, respectively, as shown on this template. The title shall be bold if possible, centered at the top of the page and followed by the name(s) of the author(s) and their affiliation. We recommend the use of 1.0 (single) line spacing. In these instructions we use the Times New Roman font. If you cannot produce an output in Times New Roman, choose a font on your system that is similar. The font size used in the abstract should be no smaller than 10 point. Tables, graphs and figures may be smaller if legible. References should be collected at the end of your paper.

Pictures
Half-tone copies of black and white photographs are preferable for reproduction; however, if this is not possible, please understand that the quality may be degraded.

Cover letter
Please submit 2 copies of your abstracts with a cover letter identifying the contact author, mailing address, telephone number, FAX number, and e-mail address (if available).

Notification
You will be notified by 1 February 2004 whether your paper is accepted for the Workshop. If your paper is accepted you will receive instructions for preparing camera-ready manuscripts.

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