Annotation of the article

A new class of superionic conductors (SIC) ‑ advanced superionic conductors (ASICs) with the activation energy of ionic conductivity E ≈ 0,1 eV ‑ is marked out. A new direction of nanoionics ‑ nanoionics of ASICs ‑ is proposed. Nanosystems of solid state ionic conductors are divided into two classes differing by opposite influence of surface layer disordering on ionic conductivity si and E:

1) nano-systems on the basis of compounds with an initially small si (large values of E);
2) nanosystems on the basis of ASICs (nano-ASICs). It is proposed that a fundamental challenge of nanoionics ‑ conservation of fast ion transport (FIT) in nano-ASIC-should be solved by the creation of structure-ordered (coherent) ASIC/indifferent electrode (InEl) heteroboundaries.

In the work for nano-ASICs are introduced: (i) a characteristic parameter P = d/lQ (d ‑ the thickness of a layer of ASIC with disordered crystal structures in the area of a hetero-boundary, lQ ‑ the screening length for mobile ions in the bulk of ASIC, and (ii) a criterion of the conservation of FIT. It is shown that in nano-ASICs at the leveling of Fermi levels, the contact potentials Fat the ASIC/InEl coherent heterojunctions satisfy the condition V<BT/e. The possibility for the creation of nanoionic supercapacitors (NSC) with submicron sizes on the basis of ASIC/InEl coherent heterojunctions and specific capacity ~10‑4 F/cm2, work frequencies ~108-109 Hz for a 5 Gbit capacitor DRAM, hybrid sources of energy and power of microsystem technology and wireless sensor networks is pointed out.