Annotation of the article

Issue N11 2017 year

DOI: 10.17587/nmst.19.658-666

A Comparative Analysis of the Metal-Assisted Chemical Etching using Ag and Ni Thick Films for 3D Silicon Structure Formation

Volovlikova O.V., Ph. D., Associate Professor, Gavrilov S.A., D. Sc., Professor, National Research University Moscow Institute of Electronic Technology, Moscow, Zelenograd, 124498, Russian Federation, Sysa A.V., Engineer, Scientific-Manufacturing Complex "Technological Centre", Moscow, Zelenograd, 124498, Russian Federation, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, 119991, Russian Federation, Savitskiy A.I., Postgraduate, Dronova D.A., Engineer, Zheleznyakova A.V., Ph. D., Associate Professor, National Research University of Electronic Technology, Moscow, 124498, Russian Federation, Pavlov A.A., Ph. D., Deputy Director, e-mail: alexander.a.pavlov@gmail.com, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, 115487, Russian Federation

The Ni-assisted and Ag-assisted chemical etching in the solution HF/H₂O-/H₂O, morphology and composition of porous Si were investigated. A comparative analysis of the 3D silicon structure (3D-Si) formation based on metal-assisted chemical etching using 50 nm thick films Ag and Ni on p-Si and n-Si at T = 25 and 75 °C was carried out. Type of the metal mask and formation methods provide the possibility of forming 3D-Si with a different aspect ratio. It was established that aspect ratio of 3D-Si is determined by the etching rate of Si and the lateral etching of 3D-Si. It depends on the reduction potentials of Ag, Ni, and dissolution potential of Si. The basic features of the formation of 3D structures by metal-assisted chemical etching with Ni and Ag were identified.

Keywords: MACE, Ag and Ni thin films, contact corrosion, 3D silicon structures, lateral etching, photo-electrochemical etching

pp. 658 - 666